applications dc/dc converter power management loadswitch features 0. 7 a, 20 v. r ds(on) = 4 00 m w @ v gs = 4.5 v r ds(on) = 55 0 m w @ v gs = 2.5 v esd protection diode (note 3) low gate charge high performance trench technology for extremely low r ds(on) compact industry standard sc70-6 surface mount package s g d d g s pin 1 sc70-6 the pinouts are symmetrical ; pin 1 and pin 4 are interchangeable. absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 20 v v gss gate-source voltage 12 v i d drain current ? continuous (note 1) 0. 7 a ? pulsed 2.1 p d power dissipation for single operation (note 1) 0.3 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1) 415 c/w package marking and ordering information device marking device reel size tape width quantity . 6 7 FDG6317NZ 7?? 8mm 3000 units 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com FDG6317NZ smd type smd type smd type product specification
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown v oltage v gs = 0 v, i d = 250 m a 20 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a, referenced to 25 c 13 mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 m a i gss gate?body leakage v gs = 12 v, v ds = 0 v 10 m a i gss gate?body leakage v gs = 4.5 v, v ds = 0 v 1 m a on characteristics (note 2) v gs( th ) gate threshold voltage v ds = v gs , i d = 250 m a 0.6 1.2 1.5 v d v gs( th) d t j gate threshold voltage temperature coefficient i d = ?250 m a, referenced to 25 c ? 2 mv/ c r ds(on) static drain?source on?resistance v gs = 4.5 v, i d = 0. 7 a v gs = 2.5 v, i d = 0. 6 a v gs = 4.5 v, i d = 0. 7 a, t j =125c 30 0 450 390 4 00 55 0 560 m w i d(on) on?state drain current v gs = 4.5 v, v ds = 5 v 1 a g fs forward transconductance v ds = 5 v, i d = 0. 7 a 1.8 s dynamic characteristics c iss input capacitance 66.5 pf c oss output capacitance 19 pf c rss reverse transfer capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz 10 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 5.8 w switching characteristics (note 2) t d(on) turn?on delay time 5.5 11 ns t r turn?on rise time 7 15 ns t d(off) turn?off delay time 7.5 15 ns t f turn?off fall time v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 w 2.5 5 ns q g total gate charge 0.76 1. 1 nc q gs gate?source charge 0.18 nc q gd gate?drain charge v ds = 10 v, i d = 0. 7 a, v gs = 4.5 v 0. 20 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 0.25 a v sd drain?source diode forward voltage v gs = 0 v, i s = 0.25 a (note 2) 0 .8 1.2 v t rr diode reverse recovery time 8.3 ns q rr diode reverse recovery charge i f = 0.7 a, d if / d t = 100 a/s 1.2 nc notes: 1. r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ja is determined by the user's board design. r q ja = 415c/w when mounted on a minimum pad . 2. pulse test: pulse width < 300 m s, duty cycle < 2.0% 3. the diode connected between the gate and source serves only as protection against esd. no gate overvoltage rating is implied. FDG6317NZ smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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